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www.irf.com 1 09/14/07 IRFP4229PBF notes through are on page 8 description hexfet ? power mosfet

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features advanced process technology key parameters optimized for pdp sustain, energy recovery and pass switch applications low e pulse rating to reduce power dissipation in pdp sustain, energy recovery and pass switch applications low q g for fast response high repetitive peak current capability for reliable operation short fall & rise times for fast switching 175c operating junction temperature for improved ruggedness repetitive avalanche capability for robustness and reliability gds gate drain source s d g to-247ac s d g d v ds min 250 v v ds (avalanche) typ. 300 v r ds(on) typ. @ 10v 38 m i rp max @ t c = 100c 87 a t j max 175 c key parameters absolute maximum ratings parameter units v gs gate-to-source voltage v i d @ t c = 25c continuous drain current, v gs @ 10v a i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current i rp @ t c = 100c repetitive peak current p d @t c = 25c power dissipation w p d @t c = 100c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range soldering temperature for 10 seconds mounting torque, 6-32 or m3 screw n thermal resistance parameter typ. max. units r jc junction-to-case CCC 0.49 r cs case-to-sink, flat, greased surface 0.24 CCC c/w r ja junction-to-ambient CCC 40 87 300 -40 to + 175 10lb in (1.1n m) 310150 2.0 max. 31 180 44 30 downloaded from: http:///
2 www.irf.com s d g electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 250 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 210 CCC mv/c r ds(on) static drain-to-source on-resistance CCC 38 46 m ? v gs(th) gate threshold voltage 3.0 CCC 5.0 v ? v gs(th) / ? t j gate threshold voltage coefficient CCC -14 CCC mv/c i dss drain-to-source leakage current CCC CCC 20 a CCC CCC 1.0 ma i gss gate-to-source forward leakage CCC CCC 100 na gate-to-source reverse leakage CCC CCC -100 g fs forward transconductance 83 CCC CCC s q g total gate charge CCC 72 110 nc q gd gate-to-drain charge CCC 26 CCC t d(on) turn-on delay time CCC 25 CCC t r rise time CCC 27 CCC ns t d(off) turn-off delay time CCC 44 CCC t f fall time CCC 19 CCC t st shoot through blocking time 100 CCC CCC ns e pulse energy per pulse j c iss input capacitance CCC 4560 CCC c oss output capacitance CCC 390 CCC pf c rss reverse transfer capacitance CCC 100 CCC c oss eff. effective output capacitance CCC 290 CCC l d internal drain inductance CCC 5.0 CCC between lead, nh 6mm (0.25in.) l s internal source inductance CCC 13 CCC from package avalanche characteristics parameter units e as single pulse avalanche energy mj e ar repetitive avalanche energy mj v ds(avalanche) repetitive avalanche voltage v i as avalanche current a diode characteristics parameter min. typ. max. units i s @ t c = 25c continuous source current CCC CCC 44 (body diode) a i sm pulsed source current CCC CCC 180 (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 190 290 ns q rr reverse recovery charge CCC 840 1260 nc v dd = 125v, v gs = 10v i d = 26a r g = 5.0 ? see fig. 22 CCC 790 CCC CCC 1390 CCC 3126 CCCCCC 300 CCC typ. max. ? = 1.0mhz, CCC 300 t j = 25c, i f = 26a, v dd = 50v di/dt = 100a/s t j = 25c, i s = 26a, v gs = 0v showing the integral reverse p-n junction diode. conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 26a v ds = v gs , i d = 250a v ds = 250v, v gs = 0v v gs = 0v, v ds = 0v to 200v v ds = 250v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v v gs = 0v l = 220nh, c= 0.3f, v gs = 15v mosfet symbol v ds = 25v, i d = 26a v dd = 125v, i d = 26a, v gs = 10v conditions and center of die contact v dd = 200v, v gs = 15v, r g = 4.7 ? v ds = 200v, r g = 4.7 ?, t j = 25c l = 220nh, c= 0.3f, v gs = 15v v ds = 200v, r g = 4.7 ?, t j = 100c v ds = 25v downloaded from: http:///
www.irf.com 3 fig 6. typical e pulse vs. drain current fig 5. typical e pulse vs. drain-to-source voltage fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 5.5v vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v bottom 5.5v 4.0 5.0 6.0 7.0 8.0 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 25v 60s pulse width t j = 25c t j = 175c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 26a v gs = 10v 150 160 170 180 190 200 v ds, drain-to -source voltage (v) 0 400 800 1200 1600 e n e r g y p e r p u l s e ( j ) l = 220nh c = 0.3f 100c 25c 100 110 120 130 140 150 160 170 i d, peak drain current (a) 0 200 400 600 800 1000 1200 1400 e n e r g y p e r p u l s e ( j ) l = 220nh c = variable 100c 25c 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 175c 5.5v vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v bottom 5.5v downloaded from: http:///
4 www.irf.com fig 11. maximum drain current vs. case temperature fig 8. typical source-drain diode forward voltage fig 12. maximum safe operating area fig 7. typical e pulse vs.temperature fig 10. typical gate charge vs.gate-to-source voltage fig 9. typical capacitance vs.drain-to-source voltage 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 6000 7000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20 40 60 80 100 120 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 160v v ds = 100v v ds = 40v i d = 26a 25 50 75 100 125 150 175 t j , junction temperature (c) 0 10 20 30 40 50 i d , d r a i n c u r r e n t ( a ) 25 50 75 100 125 150 temperature (c) 0 400 800 1200 1600 2000 e n e r g y p e r p u l s e ( j ) l = 220nh c= 0.3f c= 0.2f c= 0.1f 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1sec 10sec operation in this area limited by r ds (on) 100sec downloaded from: http:///
www.irf.com 5 fig 17. maximum effective transient thermal impedance, junction-to-case fig 15. threshold voltage vs. temperature fig 14. maximum avalanche energy vs. temperature fig 13. on-resistance vs. gate voltage fig 16. typical repetitive peak current vs. case temperature 5 6 7 8 9 10 v gs , gate-to-source voltage (v) 0.00 0.10 0.20 0.30 0.40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) t j = 25c t j = 125c i d = 26a -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? (sec) 0.104678 0.000148 0.222607 0.001836 0.16298 0.01527 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i / ri 25 50 75 100 125 150 175 case temperature (c) 0 20 40 60 80 100 120 140 r e p e t i t i v e p e a k c u r r e n t ( a ) ton= 1s duty cycle = 0.25 half sine wave square pulse 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.8a 9.7a bottom 26a downloaded from: http:///
6 www.irf.com fig 19b. unclamped inductive waveforms fig 19a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 20a. gate charge test circuit fig 20b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 18.

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? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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1k vcc dut 0 l downloaded from: http:///
www.irf.com 7 fig 21a. t st and e pulse test circuit fig 21b. t st test waveforms fig 21c. e pulse test waveforms pulse a pulse b t st driver dut l c vcc rg rg b a ipulse fig 22a. switching time test circuit fig 22b. switching time waveforms &' 1 (
# 0.1 % + - v ds 90%10% v gs t d(on) t r t d(off) t f downloaded from: http:///
8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/2007
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.85mh, r g = 25 ? , i as = 26a. pulse width 400s; duty cycle 2%. r is measured at t j of approximately 90c. half sine wave with duty cycle = 0.25, ton=1sec. to-247ac package is not recommended for surface mount application.

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&0&1 note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ downloaded from: http:///

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